? semiconductor components industries, llc, 2000 october, 2000 rev. 2 1 publication order number: msr860/d msr860 switchmode ? soft recovery power rectifier plastic to220 package designed for use as free wheeling diodes in variable speed motor control applications and switching power supplies. these stateoftheart devices have the following features: ? soft recovery with guaranteed low reverse recovery charge (q rr ) and peak reverse recovery current (i rrm ) ? 150 c operating junction temperature ? popular to220 package ? epoxy meets ul94, v o @ 1/8 ? low forward voltage ? low leakage current ? high temperature glass passivated junction mechanical characteristics: ? case: molded epoxy ? weight: 1.9 grams (approximately) ? finish: all external surfaces corrosion resistant and terminal leads readily solderable ? lead temperature for soldering purposes: 260 c max. for 10 seconds ? shipped in 50 units per plastic tube ? marking: msr860 maximum ratings rating symbol value unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 600 v average rectified forward current (at rated v r , t c = 125 c) i o 8.0 a peak repetitive forward current (at rated v r , square wave, 20 khz, t c = 125 c) i frm 16 a nonrepetitive peak surge current (surge applied at rated load conditions halfwave, single phase, 60 hz) i fsm 100 a storage/operating case temperature range t stg , t c 65 to +150 c operating junction temperature range t j 65 to +150 c thermal characteristics thermal resistance junctiontocase thermal resistance junctiontoambient r jc r ja 1.6 72.8 c/w device package shipping ordering information msr860 to220 http://onsemi.com to220ac case 221b style 1 50 units/rail 3 4 1 soft recovery power rectifier 8.0 amperes 600 volts marking diagram msr860 msr860 = device code 1 3 4
msr860 http://onsemi.com 2 electrical characteristics characteristic symbol value unit maximum instantaneous forward voltage (note 1.) v f t j = 25 c t j = 150 c v a u s a a eous o a d o age ( o e ) (i f = 8.0 a) typical f 1.7 1.4 1.3 1.1 maximum instantaneous reverse current i r t j = 25 c t j = 150 c a a u s a a eous e e se cu e (v r = 600 v) typical r 10 2.0 1000 80 maximum reverse recovery time (note 2.) t rr t j = 25 c t j = 125 c ns a u e e se eco e y e ( o e ) (v r = 400 v, i f = 8.0 a, di/dt = 200 a/ s) typical rr 120 95 190 125 s typical recovery softness factor (v r = 400 v, i f = 8.0 a, di/dt = 200 a/ s) s = t b /t a 2.5 3.0 maximum peak reverse recovery current (v r = 400 v, i f = 8.0 a, di/dt = 200 a/ s) i rrm 5.8 8.3 a maximum reverse recovery charge (v r = 400 v, i f = 8.0 a, di/dt = 200 a/ s) q rr 350 700 nc 1. pulse test: pulse width 380 m s, duty cycle 2% 2. t rr measured projecting from 25% of i rrm to zero current typical electrical characteristics figure 1. typical forward voltage i f , instantaneous forward current (amps) v r , reverse voltage (volts) figure 2. typical reverse current v f , forward voltage drop (volts) t c , case temperature ( c) figure 3. current derating, case 100 10 600 400 300 200 100 100 10 1 1.9 1.3 0.9 0.5 1 160 120 40 0 2 4 6 14 0 i r , reverse current ( a) i f(av) , average forward current (amps) 500 0.1 10 8 12 t j = 150 c 100 c 25 c rated v r applied 80 dc square wave 1.7 1.1 0.7 1.5 t j = 150 c 100 c 25 c 125 c
msr860 http://onsemi.com 3 typical electrical characteristics t a , ambient temperature ( c) figure 4. current derating, ambient i f(av) , average forward current (amps) figure 5. power dissipation 160 120 40 0 3.0 2.5 2.0 1.5 1.0 0.5 0 14 8 4 0 16 14 12 10 2 0 i f(av) , average forward current (amps) p f(av) , average power dissipation (watts) 4 6 8 80 rated v r applied dc square wave 6 212 10 t j = 150 c dc square wave t figure 6. typical reverse recovery time figure 7. typical reverse recovery time di f /dt (a/ s) t di f /dt (a/ s) 100 500 160 20 0 , reverse recovery time (ns) rr 100 50 0 100 200 i figure 8. typical peak reverse recovery current figure 9. typical peak reverse recovery current di f /dt (a/ s) i di f /dt (a/ s) 100 200 500 8 4 0 , peak reverse recovery current (amps) rrm 14 2 0 100 140 120 100 80 60 40 200 300 400 300 400 500 150 200 250 200 300 400 500 4 6 8 10 12 300 400 , reverse recovery time (ns) rr i f = 16 a 8 a 4 a t j = 25 c v r = 400 v i f = 16 a 8 a 4 a t j = 125 c v r = 400 v 6 2 , peak reverse recovery current (amps) rrm i f = 16 a 8 a 4 a t j = 25 c v r = 400 v i f = 16 a 8 a 4 a t j = 125 c v r = 400 v
msr860 http://onsemi.com 4 typical electrical characteristics q figure 10. typical reverse recovery charge figure 11. typical reverse recovery charge di f /dt (a/ s) di f /dt (a/ s) 100 300 500 200 100 0 700 200 0 100 200 300 400 500 400 200 300 250 150 350 50 , reverse recovery charge (nc) rr i f = 16 a 8 a 4 a t j = 25 c v r = 400 v i f = 16 a 8 a 4 a t j = 125 c v r = 400 v 400 300 500 100 600 900 800 q , reverse recovery charge (nc) rr e figure 12. typical switching off losses figure 13. typical switching off losses di f /dt (a/ s) dl f /dt (a/ s) 100 90 10 0 100 50 0 100 200 300 400 500 20 30 40 50 60 70 80 , switching off losses ( j) off 200 300 400 500 i f = 16 a 8 a 4 a t j = 25 c v r = 400 v 200 150 250 i f = 16 a 8 a 4 a t j = 125 c v r = 400 v e , switching off losses ( j) off figure 14. thermal response t, time (ms) 0.1 1.0 0.01 1.0 10 100 1000 0.1 r(t), transient thermal response 0.01 (normalized) z q jc (t) = r(t) r q jc r q jc = 1.6 c/w max d curves apply for power pulse train shown read time at t 1 t j(pk) - t c = p (pk) z q jc (t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 d = 0.5 0.1 0.05 0.01 single pulse
msr860 http://onsemi.com 5 package dimensions to220 twolead case 221b04 issue d b r j d g l h q t u a k c s 4 13 dim min max min max millimeters inches a 0.595 0.620 15.11 15.75 b 0.380 0.405 9.65 10.29 c 0.160 0.190 4.06 4.82 d 0.025 0.035 0.64 0.89 f 0.142 0.147 3.61 3.73 g 0.190 0.210 4.83 5.33 h 0.110 0.130 2.79 3.30 j 0.018 0.025 0.46 0.64 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.14 1.52 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.14 1.39 t 0.235 0.255 5.97 6.48 u 0.000 0.050 0.000 1.27 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. f style 1: pin 1. cathode 2. n/a 3. anode 4. cathode
msr860 http://onsemi.com 6 notes
msr860 http://onsemi.com 7 notes
msr860 http://onsemi.com 8 on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information central/south america: spanish phone : 3033087143 (monfri 8:00am to 5:00pm mst) email : onlitspanish@hibbertco.com tollfree from mexico: dial 018002882872 for access then dial 8662979322 asia/pacific : ldc for on semiconductor asia support phone : 3036752121 (tuefri 9:00am to 1:00pm, hong kong time) toll free from hong kong & singapore: 00180044223781 email : onlitasia@hibbertco.com japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. msr860/d switchmode is a trademark of semiconductor components industries, llc. north america literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com fax response line: 3036752167 or 8003443810 toll free usa/canada n. american technical support : 8002829855 toll free usa/canada europe: ldc for on semiconductor european support german phone : (+1) 3033087140 (monfri 2:30pm to 7:00pm cet) email : onlitgerman@hibbertco.com french phone : (+1) 3033087141 (monfri 2:00pm to 7:00pm cet) email : onlitfrench@hibbertco.com english phone : (+1) 3033087142 (monfri 12:00pm to 5:00pm gmt) email : onlit@hibbertco.com european tollfree access*: 0080044223781 *available from germany, france, italy, uk, ireland
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